AOTF11N60
MOSFETManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOTF11N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220F package, offers a continuous drain current (Id) of 11A at 25°C and a maximum power dissipation of 50W. Key electrical parameters include a typical Rds(On) of 650mOhm at 10V Vgs and 5.5A Id, with a gate charge (Qg) of 30.6 nC at 10V Vgs. Input capacitance (Ciss) is specified at 1656 pF maximum at 25V Vds. The device operates across an extended temperature range of -55°C to 150°C. Applications include power factor correction (PFC), switched-mode power supplies (SMPS), and general-purpose power switching in industrial and computing sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1656 pF @ 25 V |
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