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AOTF11N60

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AOTF11N60

MOSFET

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOTF11N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220F package, offers a continuous drain current (Id) of 11A at 25°C and a maximum power dissipation of 50W. Key electrical parameters include a typical Rds(On) of 650mOhm at 10V Vgs and 5.5A Id, with a gate charge (Qg) of 30.6 nC at 10V Vgs. Input capacitance (Ciss) is specified at 1656 pF maximum at 25V Vds. The device operates across an extended temperature range of -55°C to 150°C. Applications include power factor correction (PFC), switched-mode power supplies (SMPS), and general-purpose power switching in industrial and computing sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A
Rds On (Max) @ Id, Vgs650mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)50W
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1656 pF @ 25 V

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