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AOTF11C60PL

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AOTF11C60PL

MOSFET N-CH 600V 11A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOTF11C60PL is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 11A at 25°C. With a maximum Power Dissipation of 37W (Tc) and a low Rds On of 400mOhm at 5.5A and 10V drive, it offers efficient switching performance. The device has a Gate Charge (Qg) of 50 nC at 10V and an Input Capacitance (Ciss) of 2333 pF at 100V. Packaged in a TO-220-3 Full Pack for through-hole mounting, the AOTF11C60PL operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for power factor correction, switch mode power supplies, and general-purpose power switching applications within industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)37W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2333 pF @ 100 V

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