AOTF11C60P
MOSFET N-CH 600V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AOTF11C60P, offers a 600V drain-source voltage and continuous drain current of 11A at 25°C. This TO-220F packaged device features a maximum on-resistance of 400mOhm at 5.5A and 10V gate-source voltage. With a maximum power dissipation of 50W at 25°C (Tc) and a gate charge of 50 nC at 10V, the AOTF11C60P is suitable for applications requiring robust switching performance. Key parameters include input capacitance (Ciss) of 2333 pF at 100V and a threshold voltage (Vgs(th)) of 5V at 250µA. This component is commonly utilized in power supply, industrial motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2333 pF @ 100 V |
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