AOTF11C60
MOSFET N-CH 600V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF11C60 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600 V breakdown voltage (Vdss) and a continuous drain current of 11A (Tc) at 25°C. The device offers a maximum Rds On of 400mOhm at 5.5A and 10V gate drive voltage. With a power dissipation capability of 50W (Tc), it is suitable for demanding power conversion circuits. Key parameters include a gate charge of 42 nC @ 10 V and input capacitance of 2010 pF @ 50 V. The AOTF11C60 is housed in a TO-220F package, facilitating through-hole mounting. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications where robust high-voltage switching is critical. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 50 V |
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