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AOTF11C60

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AOTF11C60

MOSFET N-CH 600V 11A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOTF11C60 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600 V breakdown voltage (Vdss) and a continuous drain current of 11A (Tc) at 25°C. The device offers a maximum Rds On of 400mOhm at 5.5A and 10V gate drive voltage. With a power dissipation capability of 50W (Tc), it is suitable for demanding power conversion circuits. Key parameters include a gate charge of 42 nC @ 10 V and input capacitance of 2010 pF @ 50 V. The AOTF11C60 is housed in a TO-220F package, facilitating through-hole mounting. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications where robust high-voltage switching is critical. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 50 V

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