AOTF10T60PL
MOSFET N-CH 600V 10A TO220FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOTF10T60PL. This device features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 10 A at 25°C (Tc). The Rds(on) is specified at a maximum of 700 mOhms with an Id of 5 A and Vgs of 10 V. With a gate charge (Qg) of 40 nC at 10 V and input capacitance (Ciss) of 1595 pF at 100 V, this MOSFET is suitable for applications requiring efficient switching. The maximum power dissipation is 33 W at 25°C (Tc). It is housed in a TO-220F package with through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). Common applications include power supplies and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 100 V |
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