AOTF10T60P
MOSFET N-CH 600V 10A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOTF10T60P is a 600V N-Channel MOSFET. This component features a continuous drain current of 10A at 25°C with a maximum power dissipation of 43W. The drain-to-source breakdown voltage is 600V, and the Rds(on) is a maximum of 700mOhm at 5A and 10V gate-source voltage. Gate charge (Qg) is specified at 40 nC maximum at 10V, with input capacitance (Ciss) at 1595 pF maximum at 100V. The device operates across a temperature range of -55°C to 150°C and is housed in a TO-220F package suitable for through-hole mounting. This MOSFET is utilized in power conversion applications, including power supplies and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 100 V |
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