AOTF10N90
MOSFET N-CH 900V 10A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF10N90 is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 10A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 980mOhm at 5A and 10V gate drive. Key parameters include Gate Charge (Qg) of 75 nC and Input Capacitance (Ciss) of 3160 pF, both specified at typical operating conditions. The AOTF10N90 is housed in a TO-220F package, suitable for through-hole mounting. With a maximum power dissipation of 50W (Tc), this MOSFET is utilized in power supply, lighting, and industrial motor control applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
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