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AOTF10N90

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AOTF10N90

MOSFET N-CH 900V 10A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF10N90 is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 10A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 980mOhm at 5A and 10V gate drive. Key parameters include Gate Charge (Qg) of 75 nC and Input Capacitance (Ciss) of 3160 pF, both specified at typical operating conditions. The AOTF10N90 is housed in a TO-220F package, suitable for through-hole mounting. With a maximum power dissipation of 50W (Tc), this MOSFET is utilized in power supply, lighting, and industrial motor control applications. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs980mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3160 pF @ 25 V

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