AOTF10N65
MOSFET N-CH 650V 10A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. MOSFET AOTF10N65 is a 650V N-Channel power MOSFET designed for high-efficiency applications. Featuring a continuous drain current of 10A at 25°C (Tc) and a maximum power dissipation of 50W (Tc), this device offers a low on-resistance of 1 Ohm at 5A, 10V. The AOTF10N65 boasts a gate charge of 33 nC at 10V and an input capacitance of 1645 pF at 25V. Its TO-220F package with through-hole mounting facilitates integration into various systems. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supply, motor control, and lighting applications. The device supports a gate-source voltage range of ±30V, with a threshold voltage (Vgs(th)) of 4.5V at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
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