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AOTF10N60CL

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AOTF10N60CL

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Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, AOTF10N60CL, offers a 600V drain-source breakdown voltage and a continuous drain current of 10A at 25°C (Tj). This device features a maximum power dissipation of 50W (Tc) and a low on-resistance of 750mOhm at 5A, 10V. The AOTF10N60CL utilizes advanced MOSFET technology, with a gate charge (Qg) of 40nC at 10V and input capacitance (Ciss) of 1600pF at 25V. It is packaged in a TO-220F (TO-220-3 Full Pack) through-hole mounting configuration and operates across a wide temperature range of -55°C to 150°C (TJ). This component is commonly found in power supply, lighting, and industrial application circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tj)
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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