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AOTF10N50FD

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AOTF10N50FD

MOSFET N-CH 500V 10A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. MOSFET, part number AOTF10N50FD, is a 500V N-Channel power MOSFET designed for high-efficiency switching applications. This TO-220F packaged device offers a continuous drain current of 10A at 25°C, with a maximum power dissipation of 50W at the same temperature. Key electrical characteristics include a drain-source voltage (Vdss) of 500V, a gate-source voltage (Vgs) tolerance of ±30V, and a threshold voltage (Vgs(th)) of 4.2V at 250µA. The on-resistance (Rds On) is specified at a maximum of 750mOhm at 5A and 10V gate drive. Input capacitance (Ciss) is 1240pF maximum at 25V, and gate charge (Qg) is 35nC maximum at 10V. The AOTF10N50FD is suitable for use in power supplies, voltage regulators, and motor control circuits across various industrial sectors. It is supplied in a TO-220-3 Full Pack package and operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.2V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1240 pF @ 25 V

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