AOT9N70
MOSFET N-CH 700V 9A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT9N70 is a 700 V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current of 9A at 25°C and a maximum power dissipation of 236W (Tc). The drain-to-source breakdown voltage is 700 V, with a gate-to-source voltage range of ±30 V. Key electrical parameters include a maximum Rds(On) of 1.2 Ohm at 4.5A, 10V, and a gate charge of 35 nC at 10 V. Input capacitance (Ciss) is specified at 1630 pF at 25 V. The AOT9N70 utilizes MOSFET technology and is housed in a standard TO-220-3 through-hole package. It is suitable for use in power supply, lighting, and industrial motor control applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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