AOT9N50
MOSFET N-CH 500V 9A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT9N50 is a 500V N-Channel MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 9A (Tc) and a maximum power dissipation of 192W (Tc). The AOT9N50 offers a low on-resistance of 850mOhm at 4.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 28 nC @ 10V and an input capacitance (Ciss) of 1042 pF @ 25V. The MOSFET is housed in a standard TO-220 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in various power conversion systems, including industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1042 pF @ 25 V |
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