AOT8N80L
MOSFET N-CH 800V 7.4A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOT8N80L, offers an 800V Drain-to-Source Voltage (Vdss) and 7.4A continuous drain current at 25°C. This through-hole device features a maximum Rds On of 1.63 Ohm at 4A and 10V. With a 245W power dissipation and a TO-220 package, the AOT8N80L is suitable for applications in power supply, lighting, and industrial control systems. Key specifications include 1650pF input capacitance and 32nC gate charge at 10V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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