AOT8N65
MOSFET N-CH 650V 8A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET AOT8N65 offers a 650 V breakdown voltage and a continuous drain current of 8 A at 25°C. This device features a maximum on-resistance of 1.15 Ohms at 4 A and 10 V gate-source voltage, with a typical gate charge of 28 nC at 10 V. The input capacitance (Ciss) is a maximum of 1400 pF at 25 V. Designed for high-voltage applications, the AOT8N65 is housed in a standard TO-220-3 package, suitable for through-hole mounting. With a maximum power dissipation of 208 W, this MOSFET is utilized in power supply units and industrial motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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