AOT8N60
MOSFET N-CH 600V 8A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT8N60 is a 600V N-Channel MOSFET designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220 package, delivers 8A continuous drain current at 25°C with a maximum power dissipation of 208W. Key electrical characteristics include a low Rds(on) of 900mOhm at 4A and 10V, and a gate charge of 35nC at 10V, ensuring efficient switching performance. The input capacitance (Ciss) is rated at 1370pF at 25V. Operating across a temperature range of -55°C to 150°C, the AOT8N60 is suitable for industrial power supplies, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
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