AOT8N50
MOSFET N-CH 500V 8A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT8N50 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 8A at 25°C (Tc). With a maximum power dissipation of 192W (Tc), it is suitable for demanding power conversion tasks. The AOT8N50 exhibits a maximum Rds On of 850mOhm at 4A and 10V, and a gate charge (Qg) of 28 nC at 10V. Its input capacitance (Ciss) is rated at 1042 pF at 25V. This component is housed in a TO-220-3 package, designed for through-hole mounting. Typical applications include power supplies, lighting, and motor control systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1042 pF @ 25 V |
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