AOT7S65L
MOSFET N-CH 650V 7A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, part number AOT7S65L, offers a 650 V breakdown voltage and 7 A continuous drain current at 25°C (Tc). This TO-220 packaged device features a maximum Rds(On) of 650 mOhm at 3.5 A and 10 V Vgs. Key parameters include a 9.2 nC gate charge (Qg) at 10 V and 434 pF input capacitance (Ciss) at 100 V. With a maximum power dissipation of 104 W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the AOT7S65L is suitable for applications in power supplies, motor control, and lighting. Drive voltage is specified at 10 V, with a gate-source breakdown voltage of ±30 V and a threshold voltage of 4 V at 250 µA.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
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