AOT7S60L
MOSFET N-CH 600V 7A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT7S60L is an N-Channel MOSFET from the aMOS™ series. This through-hole component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C (Tc). The device offers a maximum power dissipation of 104W (Tc) and a typical Rds On of 600mOhm at 3.5A and 10V. Key parameters include a gate charge (Qg) of 8.2 nC at 10V and input capacitance (Ciss) of 372 pF at 100V. The AOT7S60L is suitable for applications in power supply, lighting, and industrial control systems. It is housed in a TO-220-3 package.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |
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