AOT7N65
MOSFET N-CH 650V 7A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT7N65 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7A at 25°C (Tc). This component features a low on-resistance (Rds On) of 1.56 Ohm maximum at 3.5A and 10V drive voltage. The AOT7N65 has a gate charge (Qg) of 23 nC maximum at 10V and an input capacitance (Ciss) of 1060 pF maximum at 25V. It is packaged in a TO-220-3 through-hole configuration and offers a maximum power dissipation of 192W (Tc). Designed for general-purpose applications, this MOSFET is suitable for power supply, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.56Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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