AOT7N60
MOSFET N-CH 600V 7A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT7N60 is a 600V N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 7A at 25°C (Tc) and a maximum power dissipation of 192W (Tc). With a low on-resistance of 1.2 Ohms at 3.5A and 10V, it minimizes conduction losses. The device offers a gate charge of 28 nC at 10V and an input capacitance of 1035 pF at 25V. Packaged in a TO-220 through-hole configuration, the AOT7N60 is suitable for industrial, consumer electronics, and power supply applications. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 25 V |
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