AOT5N60
MOSFET N-CH 600V 5A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOT5N60 is a 600V N-Channel power MOSFET designed for high-voltage switching applications. This TO-220 packaged device offers a continuous drain current of 5A at 25°C and a maximum power dissipation of 132W (Tc). Key parameters include a drain-to-source voltage (Vds) of 600V, a threshold voltage (Vgs(th)) of 4.5V (max) at 250µA, and a maximum on-resistance (Rds On) of 1.8 Ohms at 2.5A and 10V gate drive. The input capacitance (Ciss) is rated at 700pF (max) at 25V, with a gate charge (Qg) of 20nC (max) at 10V. The AOT5N60 is suitable for use in power supplies, industrial automation, and lighting control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 132W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
AOD600A70
MOSFET N-CH 700V 8.5A TO252
