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AOT5N50

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AOT5N50

MOSFET N-CH 500V 5A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOT5N50 is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 5A at 25°C. With a maximum power dissipation of 104W (Tc), it is suitable for demanding power conversion tasks. The AOT5N50 exhibits a maximum Rds(On) of 1.5 Ohm at 2.5A and 10V, contributing to efficient power handling. Key parameters include a Gate Charge (Qg) of 19 nC (Max) at 10V and Input Capacitance (Ciss) of 620 pF (Max) at 25V. This MOSFET is housed in a standard TO-220-3 package, facilitating through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supplies, lighting, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V

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