AOT5N100
MOSFET N-CH 1000V 4A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOT5N100, a high-voltage N-Channel MOSFET. This device features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 195W (Tc). The AOT5N100 utilizes MOSFET technology and is housed in a TO-220-3 package for through-hole mounting. Key electrical characteristics include a maximum Rds On of 4.2 Ohm at 2.5A and 10V, a gate charge (Qg) of 23 nC at 10V, and an input capacitance (Ciss) of 1150 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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