AOT502
MOSFET N-CH 33V 9A/60A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AOT502, features a 33V drain-source voltage and a continuous drain current of 9A at ambient temperature and 60A at case temperature. With a maximum Rds(on) of 11.5mOhm at 30A and 10V Vgs, this TO-220 packaged device offers low conduction losses. The AOT502 exhibits a gate charge (Qg) of 28 nC at 10V and an input capacitance (Ciss) of 1450 pF at 15V. Maximum power dissipation is rated at 1.9W (Ta) and 79W (Tc). Operating temperature range is -55°C to 175°C. This component is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 33 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
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