AOT4S60L
MOSFET N-CH 600V 4A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOT4S60L, offers a 600V drain-source breakdown voltage and a continuous drain current of 4A at 25°C. This through-hole TO-220 packaged device features a maximum power dissipation of 83W (Tc) and a low on-resistance of 900mOhm at 2A, 10V. Key parameters include a gate charge (Qg) of 6nC at 10V and input capacitance (Ciss) of 263pF at 100V. The device supports a gate-source voltage (Vgs) range of ±30V and has a threshold voltage (Vgs(th)) of 4.1V at 250µA. The AOT4S60L is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
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