AOT4N60
MOSFET N-CH 600V 4A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT4N60 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source breakdown voltage (Vds) of 600V and a continuous drain current (Id) of 4A at 25°C. The AOT4N60 offers a maximum on-resistance (Rds On) of 2.2 Ohms at 2A and 10V gate-source voltage, with a typical gate charge (Qg) of 18 nC. Input capacitance (Ciss) is specified at 615 pF. With a maximum power dissipation of 104W (Tc), this component is housed in a TO-220 package for through-hole mounting. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply circuits, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 25 V |
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