Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AOT482L

Banner
productimage

AOT482L

MOSFET N-CH 80V 11A/105A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOT482L is an N-Channel MOSFET from the SDMOS™ series. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 11A at ambient temperature (Ta) and 105A at case temperature (Tc). Its low on-resistance (Rds On) is 7.2mOhm maximum at 20A and 10V Vgs. With a maximum gate charge (Qg) of 81 nC at 10V, it is designed for efficient switching. The AOT482L dissipates a maximum of 2.1W at Ta and 333W at Tc, operating across a temperature range of -55°C to 175°C. It is supplied in a TO-220-3 package suitable for through-hole mounting. This MOSFET is utilized in power supply applications, motor control, and power management systems.

Additional Information

Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4870 pF @ 40 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AOD4126

MOSFET N-CH 100V 7.5A/43A TO252

product image
AOT414

MOSFET N-CH 100V 5.6A/43A TO220

product image
AOB414

MOSFET N-CH 100V 6.6A/51A TO263