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AOT474

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AOT474

MOSFET N-CH 75V 9A/127A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT474 is an N-Channel MOSFET designed for power switching applications. This device features a 75V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 9A at ambient temperature and 127A at case temperature. With a low on-resistance (Rds On) of 11.3mOhm maximum at 30A and 10V gate-source voltage, the AOT474 minimizes conduction losses. The component has a maximum power dissipation of 1.9W at ambient temperature and 417W at case temperature, making it suitable for demanding thermal environments. The TO-220 package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 60 nC maximum at 10V and input capacitance (Ciss) of 3370 pF maximum at 30V. This MOSFET is utilized in industries such as industrial automation and power supply design.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs11.3mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3370 pF @ 30 V

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