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AOT472

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AOT472

MOSFET N-CH 75V 10A/140A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT472 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) capability of 10A at 25°C ambient and 140A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 8.9mOhm at 30A and 10V, minimizing conduction losses. With a maximum power dissipation of 417W (Tc), it is suitable for power switching applications in industries such as industrial automation, power supplies, and automotive systems. Key electrical characteristics include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 4500 pF at 30V. The AOT472 is provided in a TO-220-3 package, facilitating through-hole mounting and thermal management. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs8.9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 30 V

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