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AOT418L

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AOT418L

MOSFET N-CH 100V 9.5A/105A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT418L is an N-Channel Power MOSFET from the SDMOS™ series. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 9.5A at 25°C ambient and 105A at 25°C case temperature. With a low on-resistance of 10mOhm maximum at 20A and 10V, the AOT418L offers efficient power switching. It supports gate drive voltages from 7V to 10V for optimal Rds(on) performance. Key parameters include a gate charge of 83 nC (max) at 10V and input capacitance (Ciss) of 5200 pF (max) at 50V. The device is housed in a TO-220-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Maximum power dissipation is 2.1W (Ta) and 333W (Tc). This MOSFET is suitable for applications in power management and industrial equipment.

Additional Information

Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 50 V

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