AOT416
MOSFET N-CH 100V 4.7A/42A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel Power MOSFET, part number AOT416. This TO-220 packaged device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.7A at ambient temperature and 42A at case temperature. With a maximum Rds(on) of 37mOhm at 20A and 10V, it offers a low on-resistance for efficient power switching. The device supports a gate drive voltage range of 7V to 10V for optimal performance. Key parameters include a gate charge (Qg) of 23 nC and input capacitance (Ciss) of 1450 pF. The AOT416 is designed for through-hole mounting and operates across a wide temperature range from -55°C to 175°C. Its power dissipation capability is 1.92W (Ta) and 150W (Tc). This component is utilized in various industrial applications including power supplies and motor control.
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.92W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 50 V |
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