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AOT414

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AOT414

MOSFET N-CH 100V 5.6A/43A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SDMOS™ N-Channel Power MOSFET, part number AOT414. This TO-220 packaged device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current of 5.6A at ambient temperature (Ta) and 43A at case temperature (Tc). Maximum power dissipation is 1.9W (Ta) and 115W (Tc). The AOT414 offers a low on-resistance (Rds On) of 25mOhm at 20A and 10V, with a gate drive voltage range of 7V to 10V. Key parameters include a maximum gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 2200 pF at 50V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power supply, lighting, and industrial motor control sectors.

Additional Information

Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.6A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 50 V

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