AOT412
MOSFET N-CH 100V 8.2A/60A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel Power MOSFET, part number AOT412. This TO-220 packaged device features a 100V drain-source breakdown voltage and a continuous drain current of 60A at 25°C case temperature, with 8.2A continuous drain current at 25°C ambient. The AOT412 offers a low on-resistance of 15.8mOhm maximum at 20A and 10V gate-source voltage. Key electrical parameters include 3220pF maximum input capacitance (Ciss) at 50V drain-source voltage and 54 nC maximum gate charge (Qg) at 10V gate-source voltage. Its robust construction supports a maximum junction temperature of 175°C and a total power dissipation of 150W (Tc). This component is suitable for applications in power switching, motor control, and power supply designs within the automotive and industrial sectors.
Additional Information
Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
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