AOT3N60
MOSFET N-CH 600V 2.5A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT3N60 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a 600 V breakdown voltage (Vdss) and a continuous drain current capability of 2.5 A at 25°C (Tc). The AOT3N60 exhibits a maximum on-resistance (Rds On) of 3.5 Ohms at 1.25 A and 10 V (Vgs). Key electrical characteristics include a gate charge (Qg) of 12 nC at 10 V and input capacitance (Ciss) of 370 pF at 25 V. With a maximum power dissipation of 83 W (Tc), this TO-220 packaged component is suitable for mounting via through-hole methods. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply circuits and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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