AOT3N50
MOSFET N-CH 500V 3A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT3N50 is an N-Channel MOSFET designed for high voltage applications. This component features a 500 V (Vdss) drain-to-source voltage rating and can handle a continuous drain current of 3 A at 25°C (Tc). With a maximum power dissipation of 74 W (Tc), it is suitable for demanding power conversion tasks. The Rds On is specified at a maximum of 3 Ohm at 1.5 A and 10 V (Vgs). Key parameters include a gate charge (Qg) of 8 nC at 10 V and input capacitance (Ciss) of 331 pF at 25 V. The AOT3N50 utilizes TO-220 mounting and packaging, operating across a temperature range of -55°C to 150°C (TJ). This device finds application in power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 331 pF @ 25 V |
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