AOT2N60
MOSFET N-CH 600V 2A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT2N60 is a 600V N-Channel power MOSFET packaged in a TO-220-3 through-hole configuration. This device offers a continuous drain current of 2A at 25°C (Tc) and a maximum power dissipation of 74W (Tc). Key electrical parameters include a Drain-to-Source Voltage (Vdss) of 600V, a maximum Rds(On) of 4.4 Ohms at 1A and 10V, and a gate threshold voltage (Vgs(th)) of 4.5V at 250µA. Input capacitance (Ciss) is specified at 325pF at 25V, with a maximum gate charge (Qg) of 11.4nC at 10V. The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supply units, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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