AOT29S50L
MOSFET N-CH 500V 29A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOT29S50L is an N-Channel Power MOSFET from the aMOS™ series. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 29A (Tc) at 25°C. The Rds On (Max) is 150mOhm at 14.5A, 10V, with a maximum power dissipation of 357W (Tc). Key parameters include a Gate Charge (Qg) of 26.6 nC @ 10 V and Input Capacitance (Ciss) of 1312 pF @ 100 V. The AOT29S50L is housed in a TO-220-3 through-hole package, operating from -55°C to 150°C (TJ). This component is suitable for applications in power supply, industrial, and lighting sectors requiring high voltage switching capabilities.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V |
Request a Quote
Clients Also Buy
AOB27S60L
MOSFET N-CH 600V 27A TO263
AOD4S60
MOSFET N-CH 600V 4A TO252
AOTF15S60L
MOSFET N-CH 600V 15A TO220-3F
