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AOT292L

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AOT292L

MOSFET N-CH 100V 105A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT292L is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 105A at 25°C case temperature, with a continuous drain current of 14.5A at 25°C ambient temperature. The ultra-low on-resistance (Rds On) is specified at 4.5mOhm maximum at 20A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 126 nC maximum at 10V and input capacitance (Ciss) of 6775 pF maximum at 50V. The device is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in power supply, industrial motor control, and high-power switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id3.4V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6775 pF @ 50 V

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