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AOT2918L

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AOT2918L

MOSFET N-CH 100V 13A/90A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. presents the AOT2918L, an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 100V and offers a continuous drain current (Id) of 13A at ambient temperature and 90A at case temperature. The AOT2918L boasts a low on-resistance (Rds On) of 7mOhm at 20A and 10V gate-source voltage, with a maximum gate charge of 53 nC at 10V. Its robust TO-220 package allows for a maximum power dissipation of 2.1W (Ta) or 267W (Tc), and it operates within a temperature range of -55°C to 175°C. Capacitance figures include a maximum input capacitance (Ciss) of 3430 pF at 50V. This device is commonly utilized in industrial power supplies, automotive applications, and power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3430 pF @ 50 V

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