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AOT2916L

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AOT2916L

MOSFET N CH 100V 5A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOT2916L is an N-Channel MOSFET designed for through-hole mounting in a TO-220-3 package. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5A at 25°C ambient, increasing to 23A when measured at the case temperature. The device exhibits a maximum on-resistance (Rds On) of 34mOhm at 10A and 10V. With a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 870 pF at 50V, it is suitable for power switching applications. The AOT2916L operates across a temperature range of -55°C to 175°C and offers a maximum power dissipation of 2.1W (ambient) and 41.5W (case). This MOSFET is utilized in various industries including industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 50 V

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