AOT27S60L
MOSFET N-CH 600V 27A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOT27S60L, offers superior performance for demanding applications. This TO-220 packaged device features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 27 A at 25°C. With a maximum power dissipation of 357 W (Tc) and a low on-resistance (Rds On) of 160 mOhm at 13.5 A and 10 V, the AOT27S60L is engineered for efficiency. Key parameters include a gate charge (Qg) of 26 nC at 10 V and input capacitance (Ciss) of 1294 pF at 100 V. This component is suitable for use in power supply units, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1294 pF @ 100 V |
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