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AOT260L

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AOT260L

MOSFET N-CH 60V 20A/140A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOT260L is an N-Channel MOSFET designed for high-performance power switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 20A at 25°C ambient temperature (Ta) and 140A at 25°C case temperature (Tc). The low on-resistance (Rds On) of 2.5mOhm at 20A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum power dissipation of 1.9W (Ta) and 330W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 14200 pF at 30V. The AOT260L is housed in a standard TO-220-3 through-hole package and operates across a wide temperature range of -55°C to 175°C. This component finds utility in various industrial sectors, including power supplies, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14200 pF @ 30 V

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