AOT2608L
MOSFET N-CH 60V 11A/72A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT2608L is an N-Channel MOSFET designed for high-efficiency power management applications. This device features a 60V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 11A at a typical ambient temperature (Ta) and 72A at a case temperature (Tc). The AOT2608L exhibits a low on-resistance (Rds On) of 8mOhm maximum at 20A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 2.1W (Ta) and 100W (Tc), it is suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 55 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2995 pF maximum at 30V Vds. The MOSFET is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its operating temperature range is from -55°C to 175°C (TJ). This component finds application in various industrial sectors including power supplies, motor control, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2995 pF @ 30 V |
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