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AOT254L

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AOT254L

MOSFET N-CH 150V 4.2A/32A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOT254L is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source breakdown voltage (Vdss) of 150V and a continuous drain current (Id) rating of 4.2A at 25°C ambient and 32A at 25°C case temperature. The AOT254L offers a low on-resistance (Rds On) of 46mOhm maximum at 20A and 10V gate-source voltage. Its continuous drain current (Id) is specified at 4.2A (Ta) and 32A (Tc), with a maximum power dissipation of 2.1W (Ta) and 125W (Tc). Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 2150 pF maximum at 75V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a standard TO-220-3 through-hole configuration, the Alpha & Omega Semiconductor Inc. AOT254L is suitable for use in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs46mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 75 V

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