AOT210L
MOSFET N-CH 30V 20A/105A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT210L is an N-Channel MOSFET with a drain-source voltage (Vdss) of 30V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current (Id) of 20A at a 25°C ambient temperature and 105A at a case temperature. The device features a low on-resistance (Rds On) of 2.9mOhm maximum at 20A and 10V gate-source voltage. Maximum power dissipation is 1.9W ambient and 176W at the case. Key parameters include a gate charge (Qg) of 58 nC maximum at 10V and input capacitance (Ciss) of 4300 pF maximum at 15V. The AOT210L is suitable for applications requiring efficient power switching in automotive and industrial power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 176W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V |
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