AOT20S60L
MOSFET N-CH 600V 20A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOT20S60L. This device features a 600V drain-source voltage and a continuous drain current capability of 20A at 25°C. The AOT20S60L offers a maximum on-resistance of 199mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 19.8 nC and input capacitance (Ciss) of 1038 pF at 100V. With a maximum power dissipation of 266W, this TO-220 packaged component is suitable for high-voltage applications in power supply, industrial, and renewable energy sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 266W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 100 V |
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