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AOT20S60L

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AOT20S60L

MOSFET N-CH 600V 20A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOT20S60L. This device features a 600V drain-source voltage and a continuous drain current capability of 20A at 25°C. The AOT20S60L offers a maximum on-resistance of 199mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 19.8 nC and input capacitance (Ciss) of 1038 pF at 100V. With a maximum power dissipation of 266W, this TO-220 packaged component is suitable for high-voltage applications in power supply, industrial, and renewable energy sectors. The operating temperature range is -55°C to 150°C.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)266W (Tc)
Vgs(th) (Max) @ Id4.1V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1038 pF @ 100 V

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