AOT20N60L
MOSFET N-CH 600V 20A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT20N60L is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 600V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C, with a maximum power dissipation of 417W. The AOT20N60L exhibits a low on-resistance of 370mOhm at 10A and 10V, facilitated by a 10V drive voltage. Key electrical parameters include a gate charge of 74 nC and input capacitance of 3680 pF. The TO-220 package ensures robust thermal management for through-hole mounting. This MOSFET is suitable for use in industrial, power supply, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 25 V |
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