AOT20N25L
MOSFET N-CH 250V 20A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOT20N25L is an N-Channel power MOSFET designed for high-efficiency applications. This component features a 250 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20 A at 25°C, with a maximum power dissipation of 208 W at the same temperature. The device exhibits a low on-resistance (Rds On) of 170 mOhm at 10 A and 10 V, facilitated by a gate-source drive voltage of 10 V. Key parameters include a gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 1028 pF at 25 V. The AOT20N25L is housed in a standard TO-220 package suitable for through-hole mounting and operates across a wide temperature range from -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1028 pF @ 25 V |
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