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AOT20C60

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AOT20C60

MOSFET N-CH 600V 20A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOT20C60 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 20 A at 25°C (Tc). With a maximum power dissipation of 463 W (Tc) and a low on-resistance of 250 mOhm at 10 A and 10 V (Vgs), it offers efficient power handling. The device is packaged in a TO-220-3 through-hole configuration and operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge (Qg) of 74 nC at 10 V and an input capacitance (Ciss) of 3440 pF at 100 V (Vds). The AOT20C60 is suitable for use in power supply designs and industrial applications requiring robust switching capabilities.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3440 pF @ 100 V

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