AOT1N60
MOSFET N-CH 600V 1.3A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOT1N60 is a 600V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current of 1.3A at 25°C (Tc) and a maximum power dissipation of 41.7W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 9 Ohms at 650mA and 10V drive, and a gate charge (Qg) of 8 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 160 pF at 25V. The AOT1N60 utilizes Metal Oxide technology and is packaged in a standard TO-220-3 through-hole configuration, suitable for various power switching and conversion circuits. This device operates across an extended temperature range from -55°C to 150°C (TJ). It finds application in power supplies, lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 650mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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